Solid-state imaging device and method of manufacturing the same

ABSTRACT

A solid-state imaging device with a semiconductor substrate; a pixel formation region in the substrate and including a pixel made of a photoelectric conversion element; and an element isolation portion in the substrate and including an element isolation insulating layer and an impurity element isolation region. The element isolation insulating layer is positioned in a surface of the substrate. The impurity element isolation region is positioned under the element isolation insulating layer and within the substrate. The impurity element isolation region has at least a portion with a width that is narrower than that of the element isolation insulating layer. The photoelectric conversion element extends to a position under the element isolation insulating layer of the element isolation portion.

RELATED APPLICATION DATA

This application is a division of U.S. patent application Ser. No.12/720,196, filed Mar. 9, 2010, which is a division of U.S. patentapplication Ser. No. 11/941,583, filed Nov. 16, 2007, which has issuedas U.S. Pat. No. 7,851,838 on Dec. 14, 2010, which is a continuation ofU.S. patent application Ser. No. 11/560,455, filed Nov. 16, 2006, whichhas issued as U.S. Pat. No. 7,300,810 on Nov. 27, 2007, which is adivision of U.S. patent application Ser. No. 11/137,635, filed May 25,2005, which has issued as U.S. Pat. No. 7,187,023 on Mar. 6, 2007, theentireties of all of which are incorporated herein by reference to theextent permitted by law. The present application claims priority toJapanese patent application No. 2004-162035 filed in the Japanese PatentOffice on May 31, 2004, the entirety of which also is incorporated byreference herein to the extent permitted by law.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a solid-state imaging device (imagesensor) used for a video camera, a digital still camera and the like,and a method of manufacturing the solid state imaging device.

2. Description of the Related Art

A solid-state imaging device (image sensor) is a semiconductor deviceincluding a plurality of pixels that are photoelectric converters and aMOS transistor that selectively reads out a signal of the pixel to readout a signal of a pixel and is used for a video camera, a digital stillcamera and the like, for example.

Among solid-state imaging devices, particularly what is called aCMOS-type solid-state imaging device (CMOS image sensor) manufactured ina CMOS (complementary type MOS) process has advantages of low voltageand low power consumption, multifunction, and an SOC (system on chip) inwhich a peripheral circuit is integrated to be a single chip.

Accordingly, a CMOS-type solid-state imaging device has attractedattention as an imaging device used in a camera for a mobile phone unit,a digital still camera and a digital video camera.

FIG. 1 is a schematic constitutional diagram (circuit configurationdiagram) showing an example of a structure of a CMOS-type solid-stateimaging device (CMOS image sensor).

The CMOS image sensor shown in FIG. 1 includes on the same semiconductorsubstrate a pixel formation region 4 in which pixels 1 each of which ismade of a plurality of photodiodes 2 performing photoelectric conversionand a MOS transistor 3 selectively reading out from the photodiode 2 arearranged two-dimensionally, and peripheral circuits 5 and 6 to select apixel and to output a signal.

Hereinafter, a region other than the pixel formation region 4,specifically a region including the pixel selecting circuit 5 and theoutput circuit 6 is called “peripheral circuit formation region”.

In the pixel formation region 4, each pixel 1 includes the photodiode 2and three MOS transistors that are a transfer transistor 3, a resettransistor 7 and an amplifier transistor 8. In addition, in theperipheral circuit formation region, CMOS transistors are used to formthe pixel selecting circuit 5 and the output circuit 6.

In a CMOS image sensor in related art, each circuit in a peripheralcircuit formation region is formed of a CMOS transistor.

On the other hand, all of MOS transistors constituting each pixel in apixel formation region are NMOS transistors.

The NMOS transistor constituting a pixel is made to have the sameelement isolation structure as an NMOS transistor normally used in aperipheral circuit formation region (for example, refer to PatentReference 1).

FIG. 2 is a sectional view showing an element isolation structure usedfor a peripheral circuit formation region in a CMOS image sensor ofrelated art.

An N-type semiconductor well region 52 and a P-type semiconductor wellregion 53 are formed in a semiconductor substrate 51. A PMOS transistor54 is formed in the N-type semiconductor well region 52 and an NMOStransistor 55 is formed in the P-type semiconductor well region 53,respectively.

Further, these transistors 54 and 55 are electrically separated fromeach other by an element isolation portion 56 made of what is called STI(Shallow Trench Isolation) in which an element isolation layer is buriedin a trench formed in the semiconductor substrate 51. In this elementisolation portion 56, an oxide film is buried as the element isolationlayer, for example.

Furthermore, in the CMOS image sensor of related art, since the NMOStransistor constituting a pixel is separated by the element isolationportion 56 having the same structure as the NMOS transistor used in theperipheral circuit formation region, the element isolation portion 56 inwhich the element isolation layer is buried in the semiconductorsubstrate 51 shown in FIG. 2 is similarly formed, so that adjacent pixelcells 1 are also separated in the pixel formation region 4 of FIG. 1.

In addition, source/drain diffusion layers of transistors such as thetransfer transistor 3, the amplifier transistor 8, the reset transistor7 and the like, for example, formed in each pixel cell 1 of the pixelformation region 4 are also separated by the element isolation portions56 of a similar structure, respectively.

-   [Patent Reference 1] Published Japanese Patent Application No.    2003-142674 (FIG. 9)

However, in the CMOS sensor of related art, since the element isolationportion 56 is formed by burying the element isolation layer in thetrench formed in the semiconductor substrate 51 as described above,there is such a case that a warp and a crystalline defect occur in thesemiconductor substrate 51 due to a damage caused when forming thetrench in the semiconductor substrate 51 and further due to a stress andthe like caused by a difference in thermal expansion coefficient betweenthe semiconductor substrate 51 and the buried insulation layer (elementisolation layer) 56 in a heat treatment process during manufacturing.

An unnecessary electric charge (such as leakage current and darkcurrent) is generated by the warp and crystalline defect and enters thephotodiode 2.

Since the electric charge accumulated in the photodiode 2 is transferredthrough the transfer transistor 3, the electric charge generated by thewarp and the crystal defect directly becomes a noise signal to a pixelsignal.

Furthermore, when a trench is formed in a monocrystalline substrate suchas a silicon substrate, a monocrystalline end portion is formed not onlyon the surface of the substrate but also on a sidewall of the trench andthereby an interfacial level formed in the end portion also becomes afactor of a noise signal to an image signal.

In addition, in the past, an NMOS transistor constituting a pixel hasbeen separated by an element isolation portion 56 having the samestructure as an NMOS transistor used in a peripheral circuit formationregion; on the contrary, with respect to a CMOS transistor used in theperipheral circuit formation region, usually the most advanced processof miniaturization technology is applied, and further a power supplyvoltage is made low in terms of higher-speed operation, low powerconsumption, and space saving in design.

Hence, when the element isolation portion 56 is optimized correspondingto the design of the CMOS transistor in the peripheral circuit formationregion, there may occur such a case that the above-described unnecessaryelectric charge is likely to be generated in the element isolationportion 56 in the pixel formation region 4.

The present invention addresses the above-identified, and other problemsassociated with conventional methods and apparatuses and provides asolid-state imaging device in which a noise to an image signal can berestrained and miniaturization can be facilitated in a peripheralcircuit formation region, and a method of manufacturing the same.

SUMMARY OF THE INVENTION

A solid-state imaging device according to an embodiment of the presentinvention includes in the same semiconductor substrate a pixel formationregion having a pixel made of a photoelectric conversion element and aselection transistor to read out a signal charge from the photoelectricconversion element and a peripheral circuit formation region, in which afirst element isolation portion formed of an element isolation layermade of an insulation layer buried in the semiconductor substrate isformed in the peripheral circuit formation region and a second elementisolation portion formed of an element isolation region made inside thesemiconductor substrate and an element isolation layer projecting upwardfrom the semiconductor substrate is formed in the pixel formationregion, and the photoelectric conversion element is formed extending toa position under the element isolation layer of the second elementisolation portion.

A method of manufacturing a solid-state imaging device according to anembodiment of the present invention in which a pixel formation regionincludes a pixel made of a photoelectric conversion element and aselection transistor to read out a signal charge from the photoelectricconversion element and a peripheral circuit formation region formed inthe same semiconductor substrate, including the steps of: forming astopper layer on the semiconductor substrate; forming a trench reachingfrom the stopper layer to the inside of the semiconductor substrate in aportion that becomes the peripheral circuit formation region; burying aninsulation layer inside the trench to be planarized; forming an openingshallower than the trench from the stopper layer in a portion thatbecomes the pixel formation region; and burying the insulation layerinside the opening to be planarized.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit configuration diagram of a solid-state imagingdevice in related art;

FIG. 2 is a sectional view of a peripheral circuit formation region of aCMOS sensor in related art;

FIG. 3 is a schematic constitutional view (sectional view) of asolid-state imaging device according to an embodiment of the presentinvention;

FIG. 4 is a circuit configuration diagram of the solid-state imagingdevice of FIG. 3;

FIGS. 5A and 5B are characteristic curves of the solid-state imagingdevice in FIG. 3, in which FIG. 5A shows a relation between a depth ofan element isolation layer inside the substrate and the number of pixelsof abnormal output and FIG. 5B shows relations between a thickness ofthe element isolation layer, and element isolation ability and thenumber of occurrences of gate short-circuit;

FIGS. 6A through 6C are process diagrams showing a method ofmanufacturing the solid-state imaging device of FIG. 3;

FIGS. 7A through 7C are process diagrams showing a method ofmanufacturing the solid-state imaging device of FIG. 3;

FIGS. 8A through 8C are process diagrams showing a method ofmanufacturing the solid-state imaging device of FIG. 3;

FIGS. 9A and 9B are process diagrams showing a method of manufacturingthe solid-state imaging device of FIG. 3;

FIG. 10 is a schematic constitutional view (sectional view) of asolid-state imaging device according to another embodiment of thepresent invention;

FIGS. 11A through 11C are process diagrams showing a method ofmanufacturing the solid-state imaging device of FIG. 10;

FIGS. 12A through 12C are process diagrams showing a method ofmanufacturing the solid-state imaging device of FIG. 10;

FIGS. 13A and 13B are process diagrams showing a method of manufacturingthe solid-state imaging device of FIG. 10; and

FIGS. 14A and 14B are characteristic curves of the solid-state imagingdevice in FIG. 10, in which FIG. 14A shows a relation between a depth ofan element isolation layer inside the a substrate and the number ofpixels of abnormal output and FIG. 14B shows relations between athickness of the element isolation layer, and element isolation abilityand the number of occurrences of gate short-circuit.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

FIG. 3 shows a schematic constitutional view (sectional view) of asolid-state imaging device according to an embodiment of the presentinvention.

Further, FIG. 4 shows a circuit configuration diagram of the solid-stateimaging device according to the embodiment. The solid-state imagingdevice according to this embodiment has a similar circuit configurationto the circuit configuration previously shown in FIG. 1.

This solid-state imaging device includes a pixel formation region 4where a large number of pixel cells 1 each having a photodiode 2 areformed and a peripheral circuit formation region 20 formed in the samesemiconductor substrate 10 made of, for example, a N-type siliconsubstrate.

Similarly to the configuration of the element isolation portion 56 inthe related art shown in FIG. 2, an element isolation portion in whichan element isolation layer 21 of a silicon oxide film or the like isburied in the semiconductor substrate 10 is formed in the peripheralcircuit formation region 20 as shown in FIG. 3. Specifically, thiselement isolation portion has what is called a trench element isolation(STI: Shallow Trench Isolation) structure. Reference numeral 13 in thedrawing denotes a thin surface insulation film (for example, a siliconoxide film) of the substrate 10.

In the pixel formation region 4, a sensor portion 16 is made including acharge accumulation region 14 of N-type formed in the semiconductorsubstrate 10 and a positive charge accumulation region 15 of P-type (P⁺)formed around the surface of the semiconductor substrate 10.

Although not shown in the drawing, source/drain regions of a transistorare formed in each of the pixel formation region 4 and the peripheralcircuit formation region 20 in the semiconductor substrate 10, and agate electrode or the like of a transistor is formed on thesemiconductor substrate 10 through the insulation film 13. In addition,in the pixel formation region 4, a color filter and an on-chip lens arefurther formed above according to necessity.

As shown in FIG. 4, the circuit of this CMOS image sensor is configuredto include on the same semiconductor substrate the pixel formationregion 4 in which the pixels 1 each made of a plurality of photodiodes 2to perform photoelectric conversion and a MOS transistor 3 toselectively read out from the photodiode 2 are arrangedtwo-dimensionally, and peripheral circuits 5 and 6 for pixel selectionand for signal output.

In the pixel formation region 4, each pixel 1 includes the photodiode 2and three MOS transistors that are a transfer transistor 3, a resettransistor 7 and an amplifier transistor 8. Further, the pixel selectioncircuit 5 and the output circuit 6 are formed using a CMOS transistor inthe peripheral circuit formation region.

In the solid-state imaging device according to this embodiment,particularly in the pixel formation region 4, the configuration of theelement isolation portion respectively separating the transistors 3, 7and 8 between pixel cells 1 and within each pixel cell 1 (refer to thecircuit configuration diagram of FIG. 4) differs from the elementisolation portion of the peripheral circuit formation region 20.

Specifically, as shown in the pixel formation region 4 in the sectionaldiagram of FIG. 3, an element isolation layer 11 made of an impuritydiffusion layer of P-type (P⁺) is made inside the semiconductorsubstrate 10 and a convex-shaped element isolation layer (cover layer)12 projecting from the semiconductor substrate 10 is made above theP-type element isolation region 11, and the element isolation portion isformed of these element isolation region 11 and element isolation layer(cover layer) 12.

This convex-shaped element isolation layer (cover layer) 12 can beformed of an insulation layer such as a silicon oxide film, for example.

The P-type element isolation region 11 has an upper wide portion 11A anda lower narrow portion 11B and has approximately T-shaped section.

Since the P-type element isolation region 11 is formed as describedabove, element isolation can be performed based on the junctionseparation.

In addition, since the element isolation layer (cover layer) 12 isformed, leakage current due to the parasitic MOS can be restrained.

Further, in the solid-state imaging device according to this embodiment,the P-type positive charge accumulation region 15 on the surface of thesensor portion 16 is formed to connect to the upper portion 11A of theelement isolation region 11, and the N-type charge accumulation region14 of the sensor portion extends to a position under the elementisolation layer (cover layer) 12 to be formed contacting with the lowerportion 11B of the element isolation region 11.

In a structure of related art in which the STI is adopted in an elementisolation portion of a pixel formation region, a P-type region has beenformed around an insulation layer of STI structure for the purpose ofnoise reduction as described in the above-mentioned patent reference 1,for example. Since the P-type region is thus formed, it has beendifficult to form a N-type charge accumulation region of a sensorportion widely.

On the contrary, according to this embodiment, since the elementisolation is performed in the pixel formation region 4 by means of theelement isolation region 11 instead of the element isolation by the STI,the width of the element isolation portion in the semiconductorsubstrate 10 can be made narrower than the STI, and thereby the N-typecharge accumulation region 14 of the sensor portion 16 can be formedwidely such that this charge accumulation region is formed extending toa position under the element isolation layer (cover layer) 12.

A saturation charge quantity Qs can be increased by thus forming thecharge accumulation region extending to a position under the elementisolation layer (cover layer) 12.

With respect to the element isolation layer (cover layer) 12 of thepixel formation region 4, it is desirable that the depth inside thesemiconductor substrate 10 is made to 50 nm or less and the thickness ismade within a range from 50 nm to 150 nm.

In addition, although the element isolation layer (cover layer) 12 isformed partially entering the semiconductor substrate 10 as shown inFIG. 3, the element isolation layer (cover layer) 12 may be formed onlyon the surface of the semiconductor substrate 10.

FIG. 5A shows a relation in the pixel formation region 4 between thedepth formed inside the semiconductor substrate 10 of the elementisolation layer (cover layer) 12 made of the silicon oxide film (amountof digging into the silicon substrate 10) and the number of pixels inwhich abnormal output (noise) is generated.

As shown in FIG. 5A, when the depth exceeds 50 nm, the number of pixelsin which abnormal output is generated increases. This indicates the factthat a stress caused by a difference in thermal expansion coefficientgenerated between the buried element isolation layer (silicon oxidefilm) 12 and the silicon substrate 10 reaches a level that can not beneglected. In addition, this also means that when the depth is furtherincreased, the interfacial level of the silicon substrate 10 increasesand an uncontrollable trap charge increases.

Note that “ordinary STI” shown in the drawing indicates 350 nm that is athickness of an element isolation layer of ordinary STI structure. It isunderstood that the number of pixels in which abnormal output isgenerated can be greatly decreased according to the structure of thisembodiment in comparison with the element isolation layer of ordinarySTI structure.

Further, FIG. 5B shows a relation between the thickness of the elementisolation layer (silicon oxide film) 12 of the pixel formation region 4,and element isolation capacity (critical value of leakage current) andthe number of occurrences of gate short-circuit. A solid line shows theelement isolation capacity, and a broken line shows the number ofoccurrences of gate short-circuit.

As shown in FIG. 5B, when the thickness of the element isolation layer12 becomes less than 50 nm, the leakage current of the parasitic MOStransistor indicating the element isolation capacity increases; and onthe other hand, when the thickness exceeds 150 nm, the gate electrodetends to become short-circuited and a yield ratio deterioratesconsiderably. This is due to the fact that the process to form the gateelectrode on the element isolation layer 12 becomes difficult and thenumber of occurrences of gate short-circuit increases when the elementisolation layer 12 is thickened.

Accordingly, with respect to the element isolation layer (cover layer)12 formed in the pixel formation region 4, it is desirable that thedepth inside the semiconductor substrate 10 is 50 nm or less, and thethickness is within the range of 50 nm to 150 nm.

Further, it is preferable that the minimum separation width of theelement isolation portion of the peripheral circuit formation region 20is less than the minimum separation width of the element isolationportion of the pixel formation region 4.

With such structure, since the minimum separation width of the elementisolation portion is small in the peripheral circuit formation region20, miniaturization of the solid-state imaging device can further beachieved and higher-speed operation, low power consumption and spacesaving can be obtained. Further, since the minimum separation width ofthe element isolation portion is large in the pixel formation region 4,the generation of noise and leakage current can be restrainedsufficiently.

The solid-state imaging device according to this embodiment can bemanufactured, for example, as follows.

First, a surface of the semiconductor substrate 10 that is a siliconsubstrate, for example, is oxidized to form a silicon oxide film 31. Athickness of this silicon oxide film 31 is from 5 nm to 20 nm, forexample.

Next, a silicon nitride film 32 having a film thickness of 100 nm to 200nm, for example, is formed on the silicon oxide film 31 by a CVD(Chemical Vapor Deposition) method (so far refer to FIG. 6A). It shouldbe noted that this silicon nitride film 32 becomes a polishing stopperin a process of polishing a silicon oxide film, which is formed lateron, by a CMP (Chemical Mechanical Polishing) method.

Next, after the silicon nitride film 32, the silicon oxide film 31 andthe silicon substrate 10 are etched by an ordinary method in theperipheral circuit formation region 20 to form a trench 34 in thesilicon substrate 10, a surface of the trench 34 is oxidized to form anoxide film 35 (so far refer to FIG. 6B). A thickness of this oxide film35 is from 5 nm to 20 nm, for example.

Further, a silicon oxide film 36 is formed by a HDP (High DensityPlasma) method. Thus, the trench 34 is filled to form the silicon oxidefilm 36.

Subsequently, the surface is planarized by the CMP method or the like,so that the silicon oxide film 36 remains only in the trench 34.Accordingly, an element isolation layer 21 made of the silicon oxidefilm 36 is formed in the peripheral circuit formation region 20 (so farrefer to FIG. 6C). Note that since the element isolation layer 21 inFIG. 3 includes the silicon oxide film 35 on the inner wall of thetrench 34, in the following drawings the silicon oxide film 35 and thesilicon oxide film 36 is combined to be the element isolation portion21.

Next, as shown in FIG. 7A, a silicon nitride film 37 having thethickness of 30 nm to 150 nm, for example, is formed on the surface.

Here, it is desirable that pretreatment using fluoric acid is performedto remove the silicon oxide film 36 remaining other than the inside ofthe trench 34 before forming the silicon nitride film 37 inconsideration of removing a laminated film of the silicon nitride films32 and 37 using hot phosphoric acid liquid in a later process after theelement isolation portion (11, 12) of the pixel formation region 4 isformed.

Next, as shown in FIG. 7B, an opening 38 is formed in the laminated filmof the silicon nitride films 32 and 37 at a portion corresponding to theelement isolation portion of the pixel formation region 4.

It is desirable that an amount of digging into the silicon substrate 10is made as small as possible when forming the opening 38, and the depththereof is controlled to be 50 nm or less.

Subsequently, the surface of the silicon substrate 10 exposed by theopening 38 is oxidized to form a silicon oxide film 39 having athickness of 5 nm to 20 nm.

Further, an upper portion 11A of an element isolation region (channelstop layer) 11 is formed by ion implantation of a P-type impurity suchas boron, for example, in a concentration of 1×10¹² to 5×10¹³ piece/cm²(so far refer to FIG. 7C).

Next, a silicon oxide film 41 is formed to cover a surface by the CVDmethod. The silicon oxide film 41 is formed thinner than the laminatedfilm of the silicon nitride films 32 and 37. Hence, the silicon oxidefilm 41 is formed along the inner wall of the opening 38, and spaceremains in a central part of the opening 38.

It is desirable that the silicon oxide film 41 is an HTO (HighTemperature Oxide) (so far refer to FIG. 8A).

Next, a resist mask (not shown) is formed, and a lower portion 11B ofthe element isolation region 11 is formed using this resist mask by ionimplantation of a P-type impurity such as boron, for example, in aconcentration of 5×10¹² to 1×10¹⁴ piece/cm² into the silicon substrate10. Here, the silicon oxide film 41 inside the opening 38 acts as a maskwhen the ion implantation is performed, and the width of the lowerportion 11B of the element isolation region 11 becomes narrowcorresponding to the space in the central part of the opening 38.Accordingly, the lower portion 11B of the element isolation region 11 isformed to have a narrower width than the upper portion 11A, and theelement isolation region 11 is formed to have a T-shaped section (so farrefer to FIG. 8B).

Next, a silicon oxide film 42 having a thickness of 100 nm to 200 nm,for example, is formed by the HDP method. Hence, the space in thecentral part of the opening 38 is filled with the silicon oxide film 42.

Subsequently, the silicon oxide film 42 above the silicon nitride film37 is removed by planarizing the surface using the CMP (ChemicalMechanical Polishing) method or an etch-back method. At this time, thesilicon nitride film 37 acts as a stopper layer for the CMP or theetching. Accordingly, only the silicon oxide film 42 inside the opening38 remains (so far refer to FIG. 8C).

Next, the silicon nitride films 37 and 32 are removed using the hotphosphoric acid liquid.

Accordingly, as shown in FIG. 9A, the element isolation layer (coverlayer) 12 is formed in the pixel formation region 4 on the siliconsubstrate 10, including a convex-shaped insulation film (silicon oxidefilm 39, silicon oxide film 41 and silicon oxide film 42), and theelement isolation region (channel stop diffusion layer) 11 is formedunder the element isolation layer (cover layer) 12.

On the other hand, the element isolation layer 21 is formed as the STIin the peripheral circuit formation region 20 of the same siliconsubstrate 10.

Thereafter, as shown in FIG. 9B, an N-type charge accumulation region 14and a positive charge accumulation region 15 of a sensor portion 16,source/drain regions of a transistor, and the like are sequentiallyformed by ion implantation into the silicon substrate.

Then, after a gate electrode and the like are formed on the siliconoxide film 31 on the surface of the semiconductor substrate 10, a colorfilter, an on-chip lens and the like are formed in the pixel formationregion 4 as need arises to manufacture a solid-state imaging device.

According to the above-described manufacturing method, by adding aminimum necessary process to an STI formation process in related art,the element isolation layer 21 can be formed as the STI in theperipheral circuit formation region 20, and the element isolation layer(cover layer) 12 and the element isolation region 11 of the junctionseparation can be formed in the pixel formation region 4.

According to the above-described solid-state imaging device of thisembodiment, since the N-type charge accumulation region 14 of the sensorportion 16 is formed extending to a position under the element isolationlayer (cover layer) 12, the sensor portion 16 that is the photoelectricconversion element extends to a position under the element isolationlayer (cover layer) 12 and saturation charge quantity can be obtained tothe maximum.

Accordingly, the characteristics such as the resolution of thesolid-state imaging device can be improved.

Further, in the pixel formation region 4, the element isolation portionincludes the element isolation region 11 inside the semiconductorsubstrate 10 and the element isolation layer (cover layer) 12.

Accordingly, in comparison with a case where the element isolationportion of the STI structure is made, noise caused by a crystallinedefect, a damage and an interfacial level around the element isolationportion can be reduced.

Furthermore, since the element isolation layer 21 of the STI structureis formed in the peripheral circuit formation region 20 similarly to theelement isolation portion of the CMOS sensor in related art,higher-speed operation, reduction of power consumption and space savingof the peripheral circuit can be achieved simultaneously.

FIG. 10 is a schematic constitutional diagram (sectional diagram)showing a solid-state imaging device according to another embodiment ofthe present invention.

In the solid-state imaging device of this embodiment, particularly asshown in FIG. 10, an element isolation layer (cover layer) 12 in anelement isolation portion of a pixel formation region 4 includes alaminated film of a polycrystalline silicon layer 17 and a silicon oxidefilm 18, a sidewall insulation layer 19 formed on the sidewall of thelaminated film, and a silicon oxide film 39 under the polycrystallinesilicon layer 17. Although not shown in the drawing, a peripheralcircuit separation region includes the element isolation portion formedof the STI similarly to the previous embodiment shown in FIG. 3.

In addition, a lower portion 11B of an element isolation region 11 inthe element isolation portion of the pixel formation region 4 is formedto be self-aligned with the laminated film of the polycrystallinesilicon layer 17 and the silicon oxide film 18, and is formed to havethe same width as that of the laminated film.

Further, similarly to the solid-state imaging device of the previousembodiment, an N-type charge accumulation region 14 of a sensor portion16 is formed extending to a position under the element isolation layer(cover layer) 12 and connecting to the lower portion 11B of the elementisolation region 11.

Note that, since a structure of the pixel formation region 4 other thanthe above is similar to the previous embodiment shown in FIG. 3, thesame reference numerals are given and the redundant explanation thereofwill be omitted.

Since the element isolation layer (cover layer) 12 is formed using thelaminated film of the polycrystalline silicon layer 17 and the siliconoxide film 18, an shield effect can be obtained by the polycrystallinesilicon layer 17 that is a conductive layer. Since leakage current dueto a parasitic MOS can further be restrained by this shield effect, theleakage current can be restrained in comparison with a case where theelement isolation layer 12 is formed only of a silicon oxide film, evenif the thickness of the element isolation layer 12 is made thin (forexample, about 30 nm).

With respect to the element isolation layer (cover layer) 12 in thepixel formation region 4, it is desirable that the depth inside the asilicon substrate 10 is 50 nm or less and a thickness is within therange of 30 nm to 150 nm.

In addition, although the element isolation layer 12 is formed partlyentering the semiconductor substrate 10 in FIG. 10, the structure may bemade such that the element isolation layer 12 is formed only on thesemiconductor substrate 10.

The solid-state imaging device according to this embodiment can bemanufactured as follows, for example.

Note that the peripheral circuit formation region is not shown in thefollowing manufacturing process diagram.

First, a state shown in FIG. 11A is obtained from a state of FIG. 7A ofthe previous embodiment through performing similar processes to thoseshown in FIGS. 7B and 7C.

Next, as shown in FIG. 11B, the polycrystalline silicon layer 17 isformed, having the thickness of, for example 10 nm to 70 nm, that is,thinner than a laminated film of a silicon nitride film 32 and a siliconnitride film 37.

Hence, the polycrystalline silicon layer 17 is formed along the innerwall of an opening 38, and space remains in a central part of theopening 38.

Next, as shown in FIG. 11C, the lower portion 11B of the elementisolation region 11 is formed to be self-aligned with thepolycrystalline silicon layer 17 by ion implantation of a P-typeimpurity such as boron, for example, in a concentration of 5×10¹² to1×10¹⁴ piece/cm² into the silicon substrate 10. Here, thepolycrystalline silicon layer 17 in the opening 38 acts as a mask whenperforming the ion implantation, and the width of the lower portion 11Bof the element isolation region 11 becomes a narrow width correspondingto the space in the central part of the opening 38. Accordingly, thelower portion 11B of the element isolation region 11 is formed to have anarrower width than an upper portion 11A, and the element isolationregion 11 having a T-shaped section is formed.

Next, a silicon oxide film 18 is formed by the HDP method to have thethickness of 100 nm to 200 nm, for example. Accordingly, the space inthe central part of the opening 38 is filled with the silicon oxide film18.

Subsequently, the silicon oxide film 18 on the polycrystalline siliconlayer 17 is removed by planarizing the surface using the CMP method orthe etch-back method. At this time, the polycrystalline silicon layer 17acts as a stopper layer for the CMP or the etching. Accordingly, onlythe silicon oxide film 18 inside the opening 38 remains (so far refer toFIG. 12A).

Next, as shown in FIG. 12B, an exposed portion of the polycrystallinesilicon layer 17 is etched and removed by dry etching or by usingfluoro-nitric acid liquid. Hence, the silicon oxide film 18 and thepolycrystalline silicon layer 17 thereunder remain.

Next, though not shown in the drawing, a sidewall of the polycrystallinesilicon layer 17 is oxidized in the thickness of approximately 10 nm to20 nm.

Subsequently, as shown in FIG. 12C, a silicon oxide film 43 is formed tohave a thickness of 100 nm to 200 nm by the HDP.

Next, as shown in FIG. 13A, the silicon oxide film 43 is planarizedusing the CMP method or the etch-back method and a sidewall insulationlayer 19 made of the silicon oxide film 43 is formed on the sidewall ofthe laminated film of the polycrystalline silicon layer 17 and thesilicon oxide film 18. At this time, the silicon nitride films 32 and 37act as stopper layers for the CMP and the etching. Note that the siliconoxide film 18 becomes thinner than the state of FIG. 12C by the aboveprocess.

Subsequently, annealing is performed at a temperature of 600° C. to1,000° C. to densify the silicon oxide films 18 and 19.

Next, the silicon nitride films 37 and 32 are removed by using the hotphosphoric acid liquid.

Accordingly, as shown in FIG. 13B, on the semiconductor substrate 10 theelement isolation layer (cover layer) 12 is formed of the silicon oxidefilm 39, the polycrystalline silicon layer 17, the silicon oxide film 18and the sidewall insulation layer 19, and the element isolation region(channel stop diffusion layer) 11 is formed under the element isolationlayer (cover layer) 12.

On the other hand, an element isolation portion made of the STI isformed in the peripheral circuit formation region in the same siliconsubstrate 10.

After that, the N-type charge accumulation region 14 and the positivecharge accumulation region 15 of the sensor portion 16, source/drainregions of a transistor, and the like are sequentially formed by ionimplantation into the semiconductor substrate 10.

Then, after a gate electrode and the like are formed on a silicon oxidefilm 31 on the surface of the semiconductor substrate 10, a colorfilter, an on-chip lens, and the like are formed in the pixel formationregion 4 as need arises to manufacture a solid-state imaging device.

According to the above-described embodiment, since the element isolationlayer (cover layer) 12 is formed of the laminated film including thepolycrystalline silicon layer 17 and the silicon oxide film 18 thereon,an influence of an electric field of the gate electrode formed on theelement isolation layer 12 is shielded by the polycrystalline siliconlayer 17 that is a conductive layer, and the leakage current can berestrained.

Accordingly, the thickness of the element isolation layer 12 can be madethin in comparison with a case where the element isolation layer 12 isformed only of an insulation layer such as a silicon oxide film.

Here, FIG. 14A shows a relation between a depth (amount of digging intothe silicon substrate 10) of the element isolation layer 12 (coverlayer) formed inside the silicon substrate 10 in the pixel formationregion 4 and the number of pixels in which an abnormal output (noise) isgenerated; and FIG. 14B shows a relation between a thickness of theelement isolation layer 12 in the pixel formation region 4, and elementisolation capacity (critical value of leakage current) and the number ofoccurrences of gate short-circuit, with respect to this embodiment shownin FIG. 10.

Similarly to FIG. 5A, the number of pixels in which an abnormal outputis generated increases as shown in FIG. 14A when the depth exceeds 50nm.

Further, similarly to FIG. 5B, the gate electrode tends to becomeshort-circuited as shown in FIG. 14B when the thickness of the elementisolation layer 12 exceeds 150 nm, and a yield ratio deterioratesconsiderably.

Furthermore, the thickness of the element isolation layer 12, in whichthe leakage current of the parasitic MOS transistor showing the elementisolation capacity increases, decreases from less than 50 nm shown inFIG. 5B to less than 30 nm shown in FIG. 14B. Specifically, it isunderstood that when the element isolation layer 12 is provided with theconductive layer such as the polycrystalline silicon layer 17 or thelike, the thickness of the element isolation layer 12 can be made thin,where the range thereof is made 30 nm or more.

Thus, the element isolation can be performed as long as the elementisolation layer 12 has a minimum thickness of 30 nm, that is, thenecessary performance can be secured even if the thickness of theelement isolation layer is made thinner by approximately 20 nm.

In other words, since the element isolation layer 12 can be made thinnerthan a case where an element isolation layer 12 is formed only of aninsulation film, a gate electrode formed on an upper layer can beprocessed easily.

In addition, according to the above-described another embodiment,saturation charge quantity can be made large because the N-type chargeaccumulation region 14 of the sensor portion 16 is formed extending to aposition under the element isolation layer (cover layer) 12, similarlyto the previous embodiment.

Accordingly, the characteristics such as the resolution of thesolid-state imaging device can be improved.

The explanation is made with respect to the case where the semiconductorsubstrate 10 such as a silicon substrate is used as the semiconductorsubstrate in the above-described embodiments, however other than those,a semiconductor substrate may be configured to include a semiconductorsubstrate and a semiconductor epitaxial layer thereon, for example.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

1-17. (canceled)
 18. A solid-state imaging device comprising: a pixelregion configured to have a plurality of pixels, each of the pixelswhich includes a photoelectric conversion element and first transistorelements; a circuit region configured to have second transistorelements; a first isolation element is formed in the pixel region; asecond isolation element is formed in the circuit region; and wherein awidth of the second isolation element is different from that of thefirst isolation element.
 19. The solid-state imaging device according toclaim 18, further comprising: an isolation region formed under the firstisolation element.
 20. The solid-state imaging device according to claim18, wherein each pixel includes a photoelectric conversion elementincluding at least a first conductivity type of a first impurity elementand a second conductivity type of a second impurity element.
 21. Thesolid-state imaging device according to claim 18, wherein the secondisolation element is shallow trench isolation.
 22. The solid-stateimaging device according to claim 20, wherein a second impurity elementof an isolation region is formed near the photoelectric conversionelement.
 23. The solid-state imaging device according to claim 18,further comprising; each of the first transistor elements includes atransfer transistor to read out a signal charge from the photoelectricconversion element.
 24. The solid-state imaging device according toclaim 18, wherein the first isolation element is projected upward from asemiconductor substrate.
 25. The solid-state imaging device according toclaim 18, wherein the photoelectric conversion element is formedextending to a position under the first isolation element.
 26. Thesolid-state imaging device according to claim 18, wherein the firstisolation element includes an insulation film, the depth thereof in asemiconductor substrate is 50 nm or less, and the thickness thereof is50 nm or more and 150 nm or less.
 27. The solid-state imaging deviceaccording to claim 18, wherein the width of the second isolation elementis narrower than that of the first isolation element.
 28. Thesolid-state imaging device according to claim 18, wherein the firstisolation element includes a laminated film of a conductive element andan insulation element thereon, the depth thereof in a semiconductorsubstrate is 50 nm or less, and the thickness thereof is 30 nm or moreand 150 nm or less.
 29. The solid-state imaging device according toclaim 28, wherein the first isolation element is formed to beself-aligned with the laminated film of the first isolation element. 30.The solid-state imaging device according to claim 18, furthercomprising: each of the first transistor elements includes an amplifiertransistor.
 31. The solid-state imaging device according to claim 18,further comprising: each of the first transistor elements includes areset transistor.
 32. The solid-state imaging device according to claim18, further comprising: each of the first transistor elements includes aselect transistor.
 33. The solid-state imaging device according to claim18, further comprising: a well region formed in a semiconductorsubstrate.
 34. The solid-state imaging device according to claim 18,further comprising: an isolation region formed at least partially underthe first isolation element.